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Back End of Line Applications (BEoL)
Back End of Line Applications (BEoL)
ALD processes are being increasingly introduced into the fabrication sequence, as the technology of choice for highly conformal, ultra-thin films. Specific ALD application examples already exist in production, including the deposition of High-k capacitor dielectric, High-k gate stack layers, and thin barrier metals such as W or Ta...READ MORE
In metallisation schemes the stacked barrier and seed layers are deposited in one process step offering no opportunity for metrology. Measurement of these very thin layers is further complicated by the size of the features into which they are deposited, resulting in the need for measurement areas on the product wafer, and slow complex metrology that is capable of measuring a stack of metal films....READ MORE
The move towards ultra low k films requires use of a number of complex processes to create porous films which demonstrate the required k value and maintain sufficient mechanical strength...READ MORE
Atomic Layer Deposition
ALD processes are being increasingly introduced into the fabrication sequence, as the technology of choice for highly conformal, ultra-thin films. Specific ALD application examples already exist in production, including the deposition of High-k capacitor dielectric, High-k gate stack layers, and thin barrier metals such as W or Ta. ALD, which offers a direct control of composition and thickness, creates metrology challenges in characterising the actual process result. The ultra-thin nature of the films challenges film thickness measurement techniques, while the conformal growth over high-aspect ratio features may otherwise require destructive methods. Mass metrology measures the whole-wafer deposition, encompassing the 3D step-coverage; with the associated amplified response to film composition or thickness variation. Mass metrology is an ideal R&D tool for defining and measuring film properties and an ideal production monitoring solution for ALD, capable of measuring film deposition on product wafers, affirming film parameters, layer-stack and step coverage consistency.
Mass metrology effectively supports ALD development activities, with feedback on early stage film growth, which may be non-linear. In addition, understanding the self limiting growth mechanism provides an opportunity for maximising the efficient use of deposition precursors. Mass change is valuable additional information in revealing growth cycle saturation or in addressing density/composition control during process, and device development.
Barrier / Seed
In metallisation schemes the stacked barrier and seed layers are deposited in one process step offering no opportunity for metrology. Measurement of these very thin layers is further complicated by the size of the features into which they are deposited, resulting in the need for measurement areas on the product wafer, and slow complex metrology that is capable of measuring a stack of metal films. Mass metrology simplifies the on product measurement of barrier/seed layers, providing a reliable means for monitoring the stack in the actual features. The mass result includes the contribution of each layer, and each feature, providing a complete picture of the stability of the barrier/seed deposition process.
Ultra low k (Pourous SiOC)
The move towards ultra low k films requires use of a number of complex processes to create porous films which demonstrate the required k value and maintain sufficient mechanical strength. Metryx mass metrology can be used to monitor a number of these key processes and provide important information such as the stability of the porogen containing deposited film, porogen loss & efficiency of the curing process, and mass change of the films during integration processing (an indication of film damage). In addition the determination of film density through mass and thickness allows accurate the determination of the films k value.