Metryx offers solutions for a range of applications including, but not limited to:

MEASUREMENT OF LOW K

For advanced Logic devices, repeatability of low k materials in production is critical. However, once the low k dielectric has been deposited during the manufacturing process, it is difficult to know the repeatability and integrity of the film until electrical testing unless destructive measurement techniques are carried out.

Metryx Mass Metrology is a non-destructive method for measuring the k value of the film in R&D and measuring or monitoring the k value of the film during volume production.IONS SUMMARY

HIGH K GATE

Advanced Technology Nodes will require new gate Materials. With these new materials come challenges including metrology.

There are many candidates for High k Dielectrics going forward, some of which are Silicates such as HfSixOy, HfSixNy, TaSixNy. The Silicon content is critical to the dielectric performance of the gate. However the stoichiometry of these materials are particularly difficult to monitor in production.

Techniques such as RBS and XRR can be used for periodic measurement but these techniques are both expensive and time consuming. Metryx Mass Metrology is a non-destructive method for ensuring the process remains in control during volume production.

Using the relationship between film density and the materials  Silicon content, it is possible to monitor the process.

SILICON ETCH

For many device applications where a very Shallow or Deep Silicon Etch is required, it can be often difficult to measure or monitor the etch process effectively by non-destructive metrology techniques. Very often a change in depth or profile will alter the device characteristics, reducing device performance and possibly even yield.

Metryx Mass Metrology can monitor the mass change during production and can reliably predict changes to the etch process.

For more information on these, or any of our applications, please contact info@metryx.net and leave your name, contact telephone number and enquiry.